发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form a pattern all in a dry process by lifting it off by means of static power to form the pattern. CONSTITUTION:A resist pattern 12 is formed on a substrate 11, a pattern forming material is deposited on the whole surface, and depositing films 13, 14 are formed on the pattern 12 and the substrate 11. Negative charge is stored on the films 13, 14, a flexible electrostatic electrode plate 18 charged under positive control is contacted with or approached to the film 13, the film 13 on the pattern 12 is separated when the plate 18 is separated, and the remaining pattern 12 is removed by ashing. Since an oxygen plasma is generated in vacuum, steps are all continuously executed in a vacuum chamber.
申请公布号 JPS62295422(A) 申请公布日期 1987.12.22
申请号 JP19860033954 申请日期 1986.02.20
申请人 FUJITSU LTD 发明人 YAMASHITA YOSHIMI
分类号 H01L21/302;H01L21/306;H01L21/3065 主分类号 H01L21/302
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