| 摘要 |
PURPOSE:To form a high-quality initial image and to enhance stability against the lapse of time and printing resistance by forming a photoconductive layer composed essentially of amorphous silicon, and the second surface layer containing nitrogen higher in concentration than N contained in the first surface layer. CONSTITUTION:The photoconductive layer 3 is formed on an electric charge injection blocking layer 2 formed on a substrate 1, the layer 3 is composed essentially of amorphous silicon containing elements of group III of the periodic table in the range of 0.1-100ppm, and the layer 3, preferably, has a film thickness of 1-100mum. The first surface layer 4 and the second surface layer 5 are composed essentially of amorphous silicon containing nitrogen in a concentration higher in the layer 5 than in the layer 4. It is preferred to control the nitrogen concentration of the layer 4 in the range of 10-100atom% of Si, and its film thickness in the range of 0.01-5mum. On the other hand, it is preferred to control the nitrogen concentration of the layer 5 in the range of 50-130atom% of Si, and its film thickness in the range of 0.01-5mum. |
