| 摘要 |
PURPOSE:To improve the production efficiency of a reduced pressure CVD substrate by providing a supporting base in a reaction chamber of a reduced CVD unit, exposing many substrates to be deposited in the same size on the base so that one side edges are formed in a predetermined width, and so displacing them so that other parts are shielded to be superposed and arranged. CONSTITUTION:Many alumina substrates 18, such as substrates for depositing under low pressure CVD heat generating resistors for a thermal head are arranged on supporting bases 14-17 in a reaction chamber 1. The substrates 18 are all formed in the same size, one side region along one long side is exposed in a predetermined width to be superposed and brought into coincidence with the size of the predetermined region of the resistor, such as a B-doped polysilicon. Accordingly, the substrates 18 become masks for lower adjacent substrate and become those to be masked for upper adjacent substrate. Thus, the substrates can be mounted attached in high density.
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