| 摘要 |
PURPOSE:To reduce the surface area of an avalanche amplifying layer while obtaining a necessary plane region by etching the surface of a semiconductor laminate formed with a recess, then epitaxially growing a buried layer, and forming a semiconductor layer thereon to bury a buried layer. CONSTITUTION:A semiconductor laminate in which an N-type InP buffer layer 2, an InGaAs light absorption layer 3, an InGaAsP transfer layer 4 and an N<-> InP layer 5 are sequentially formed on an n<+> type InP substrate 1 is manufactured. Then, a recess 51 is formed at the center on the layer 5. When an N-type InP avalanche amplifying layer 6 is grown on the layer 5 formed with the recess 52 to form a buried part 61, the whole area of the part 61 becomes the same thickness. That is, the planar region 61a of the part 61 can be used as the whole area of the planar part 52c of the recess 52 formed on the layer 5. Thus, the layer 6 buried in this manner can be reduced in its surface area while securing the width of the planar region. |
