发明名称 ETCHING APPARATUS FOR SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To eliminate the step of connecting leads with a semiconductor substrate by supplying charge to the substrate to be etched with charged particles added to an etchant. CONSTITUTION:An electrode 10 is set to a positive potential by applying a DC voltage thereto, and charged particles 12 added into an etchant 1 is positively charged by the electrode 10. A filter 9 has a function for stopping the particles 12, and the particles 12 exist only in a range between the filter 9 and the inner wall of an etching tank 7. Here, the etchant 1 is agitated by a pump 13 to feed charge through the particles 12 to a semiconductor substrate 3, which is charged positively. Thus, since the communication of the charge is executed by the particles 12 added into the etchant 1, it is not necessary to connect leads with the substrate 3.
申请公布号 JPS62295423(A) 申请公布日期 1987.12.22
申请号 JP19860138322 申请日期 1986.06.16
申请人 NISSAN MOTOR CO LTD 发明人 NOJIRI HIDETOMO;NAKAMURA MASASHI
分类号 H01L21/3063;C25F3/02 主分类号 H01L21/3063
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