| 摘要 |
PURPOSE:To efficiently deposit high-purity Ti on Ti foil by controlling the temp. of the Ti foil to an appropriate temp. when TiI4 formed by the reaction of sponge Ti with I2 is brought into contact with the induction-heated Ti foil to deposit high-purity Ti on the Ti foil. CONSTITUTION:An extremely high-purity Ti target is required, when the circuit wiring by high-purity Ti is formed by sputtering on a large-scale integrated circuit. In the production of the target, a Ti sheet 15 is hung in a reaction vessel 11 having sponge Ti 18 and I2 19, and a high-frequency coil 14 is provided around the sheet. The Ti sheet 15 is heated at 1,100-1,500 deg.C by the coil 14 through which a high-frequency current from an electric power source 13 is passed, the vessel 11 is put in a thermostatic bath 12 to allow the Ti 18 to react with the I2 19 to form TiI4, the TiI4 is brought into contact with the high-temp. Ti sheet 15 and decomposed, and high-purity Ti is deposited on the Ti sheet 15. In this case, the temp. of the Ti sheet 15 is measured by IR radiation thermometer 16 and compared with the set standard temp. by a controller 17, the output of the power source 13 is adjusted by the deviation value to control the temp. of the Ti sheet 15 to an appropriate value, and the high- purity Ti is stably deposited.
|
