| 摘要 |
PURPOSE:To avoid degradation of operation and reliability caused by fine structure by providing flow first diffused layers second low concentration layers which protrude in the channel direction more deeply than first low concentration layers in parallel to the surface of a semiconductor substrate and in contact with the side surfaces of drain diffused layers. CONSTITUTION:On one of the main surfaces of a first conductivity type semiconductor substrate 1, diffused layers 2 and 3 of a second conductivity type, a gate oxide film 4, a gate electrode 5 and first low concentration diffused layers 6 and 7 of the second conductivity are formed. Then, below the low concentration diffused layers 6 and 7, second low concentration diffused layers 8 and 9, which are in contact with the high concentration diffused layers 2 and 3, are so formed as to be protruded to the channel direction more deeply than the 1st low concentration diffused layers 6 and 7. With this constitution, a current path near the drains can be bent downward and separation between the point where the secondary carrier generating factor becomes maximum and the maximum current path between the source and the drain can be assured.
|
