| 摘要 |
PURPOSE:To implement improvement in manufacturing efficiency and reliability and a low cost, by forming a lead plated layer on the side of a conductor member, which is connected for a bump electrode that is formed with a single composition of tin. CONSTITUTION:An oxide film 12 is formed on a semiconductor element 11. An electrode pad 13 is formed at a place where a bump electrode is to be formed, on the film 12. After a passivation film 14 is grown, a bump forming area is formed as a hole. A current conducting layer 15 is formed on the entire surface of the element 11. On the layer 15, a tightly contacted metal layer 16 and a diffused barrier plated layer 17 are formed. Thereafter, a part other than the bump electrode forming place is removed. A current is conducted to the layer 15, and a diffused barrier plated layer 19 is formed on the layer 17. Then, a tin plated layer 20 is formed on the layer 19. When the layer 20 is heated, a semispherical body is formed. Thus, a tin bump electrode 21 is obtained. The electrode 21 is thermally fused and fixed to a lead plated layer 33.
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