发明名称 BLOCH LINE MEMORY AND ITS MANUFACTURE
摘要 PURPOSE:To improve the position accuracy and transfer accuracy of paired Bloch lines by forming a heating resistor of a shape corresponding to a magnetic domain on the surface of a magnetic thin film and providing a power application means to the heating resistor. CONSTITUTION:A magnetic garnet thin film 4 is provided on a nonmagnetic garnet substrate 2. A film of HfB2 is formed on the entire face of the thin film 4 and patterning is applied to the film 20 so as to leave only a flat shape part slightly larger than the flat shape of an objective stripe magnetic domain 6. Then electrodes 22, 23 are formed by patterning on a prescribed location of the thin film 4 and the heat resistor 20. Then an upward bias magnetic field Hb is applied externally, a pulse voltage is applied between the electrodes 22 and 23 to give a pulse current to the resistor 20. Thus, a magnetic bubble 7 is generated on the thin film 4 corresponding to any of the maximum point of two temperatures and the stripe magnetic domain 6 corresponding to the heating resistor at the position formed in advance with the resistor 20 is formed accurately and stably.
申请公布号 JPS62293583(A) 申请公布日期 1987.12.21
申请号 JP19860136274 申请日期 1986.06.13
申请人 CANON INC 发明人 ODA HITOSHI;ONO TAKEO;MATSUOKA HIROSHI;NIIMI AKIRA
分类号 G11B5/02;G11C11/14;G11C19/08 主分类号 G11B5/02
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