发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To improve the coupling efficiency between an active layer and an external waveguide layer and to eliminate the effect of damage at an end surface to an active part, by wrapping the active part, which is formed by the active layer and a diffraction grating surface by the external waveguide layer. CONSTITUTION:A diffraction grating surface 2 is formed at the central part of the upper surface of a substrate 1 by etching. A first clad layer 3, an active layer 4 and a depression layer 5 are sequentially grown thereon by an epitaxial method. Then, both side parts of the layers 3, 4 and 5 are etched, and an active part 7 is formed. Thereafter, an external waveguide layer 6, and a second clad layer 8 are sequentially grown. Then, a mesa stripe structure is formed in the optical axis direction (right and left direction). When the mesa stripe structure is embedded, a stripe laser is obtained.
申请公布号 JPS62293686(A) 申请公布日期 1987.12.21
申请号 JP19860136819 申请日期 1986.06.12
申请人 FUJIKURA LTD 发明人 KATSUTA HIROHIKO;OSANAI YUTAKA
分类号 H01S5/00 主分类号 H01S5/00
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