| 摘要 |
<p>PURPOSE:To detect a very small potential difference at a high speed by connecting a drain of a storage transistor (TR) to only one bit line in pairs, forming the presence of a TR as designated data and detecting the potential difference of a couple of bit lines. CONSTITUTION:A drain of storage MOS TRs 12, 13 is connected to one bit line only of a couple of bit lines 14, 15 and the gate and source of the TRs 12, 13 are connected to word lines 11-a, 11-b and the ground. Then a precharge pulse 9 is outputted from an address transition detector circuit 4 in response to the change in the address input 2, the bit lines 14, 15 are precharged and when the word line 11-a is selected via a word drive circuit 7 by the pulse 8 from the next circuit 4, the bit line 14 is discharged via a TR 12 and a potential difference setting the presence of the TR between the paired bit lines 14, 15 as designated data is read by a sense circuit 17. Thus, even if the potential change in the bit line is very small, the result is read at a high-speed and high- speed operation/low power consumption is attained.</p> |
