| 摘要 |
PURPOSE:To provide the performance equivalent to or more excellent than that of a Schmitt trigger circuit by devising the titled method that an output potential is changed quickly as an input potential reaches a desired level. CONSTITUTION:With increase of the input voltage at the source of an N-channel FET, 8 a potential slightly becomes higher than the drain potential of a P- channel FET7, an internal impedance of the N-channel FET8 starts increasing, the drain potential of the N-channel FET8 becomes higher than the source potentail of the P-channel FET7 and the internal impedance of the P-channel FET7 is increased and the drain potential of the P-channel FET7 is decreased. Thus, as further stronger electric field is applied to the N-channel FET8 and the internal impedance of the N-channel FET8 is increased further. Thus, the output with excellent rise or fall is obtained from the drain or source of the P-channel FET7 or form the drain of the N-channel FET8.
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