| 摘要 |
PURPOSE:To prevent adhesion of reaction product to a gate valve, by arranging a gas diaphragm between the discharge outlet and the gate valve of a reaction chamber. CONSTITUTION:A row gas is introduced into a reaction chamber 1 in the state wherein a discharge outlet 9 of purge gas is closed and an introducing inlet 8 of purge gas is a little opened in a substrate exchanging chamber 7. A substrate 11 is heated at a specified temperature, and a GaAs thin film is grown on the substrate 11. After the introducing of raw, gas is interrupted and the substrate temperature is decreased, the substrate 11 is transferred into the substrate exchanging chamber 7. Then the substrate 11 is exchanged after a gate valve 6 is closed and a substrate exchanging port 10 is opened.
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