| 摘要 |
PURPOSE:To prevent wire breakdown of an interconnection electrode at a step part, by providing a double-layer structure, which comprises a silicon nitride film and a film, whose etching characteristic is different from that of the silicon nitride, as an insulator for isolating an emitter region. CONSTITUTION:In a single crystal Si substrate 1, an SiO2 film 2 is provided. A window for forming a base is provided in a polycrystalline Si layer 5 and the SiO2 film 3. Then, BF2 ions are implanted, and a P-type base region is provided. An Si3N4 film 9 and a polycrystalline Si layer 6 are formed on the entire surface. The polycrystalline Si layer undergoes RIE treatment, and a side wall is formed. With the polycrystalline Si layer 6 as a mask, the RIE treatment is performed, and the Si3N4 layer 9 is formed. An emitter forming window is provided. Then As ions are implanted, and an emitter is formed. After a polycrystalline Si layer 8 is provided, an Al electrode 10 is formed.
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