| 摘要 |
PURPOSE:To increase a growth rate in the direct thermal nitriding of an Si substrate by conducting the direct thermal nitriding of the Si substrate after the thermal oxidation of the Si substrate, the nitriding treatment of a thermal oxide film and the etching removal of the thermal oxide film. CONSTITUTION:When an Si substrate 1 is thermally oxidized and an oxide film is formed and the oxide film is nitrified and treated in ammonia or nitrogen/hydrogen gas, a layer in which there is interstitial Si in high concentration is shaped near the surface of the Si substrate 1. The layer 3 is left even by removing (etching) a thermal oxide film 2 to be nitrified at a low temperature, and the rate of nitriding is increased when the direct thermal nitriding of the Si substrate is performed in pure ammonia or nitrogen/hydrogen gas. The direct thermal nitriding film 4 of the Si substrate acquired through such treatment is used as an insulating film or an anti-oxidizing film for selective oxidation. Accordingly, the rate of direct thermal nitriding of the Si substrate can be increased by simple treatment.
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