| 摘要 |
PURPOSE:To reduce a junction capacitance and realize high density by a method wherein, after trenches are formed in a silicon substrate, oxygen or nitrogen ions are implanted to form buried insulation regions. CONSTITUTION:Trenches 9 are formed by etching a substrate 1 with a patterned oxide film 17 as a mask. Then, after the oxide film 17 is removed with a HF solution, oxygen ions are implanted and a heat treatment is carried out in an N2 atmosphere to form oxide films 6. Surface silicon regions 7 separated from the silicon substrate 1 in this manner include the trenches 9 which help to releive stresses induced when the oxide films 6 are formed, so that good crystallinity can be realized. A silicon epitaxial layer 18 is deposited by CVD, as the surface silicon regions have excellent quality, the epitaxial layer 18 also has excellent quality compared to the layer formed with conventional constitution.
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