| 摘要 |
PURPOSE:To grow an epitaxial layer in uniform thickness of the surface of a substrate by forcing up a soln. for growth to bring the soln. into contact with plural substrates longitudinally held by a holding part, and then separating the soln. in the holding part and the soln. on the outside of the holding part. CONSTITUTION:A substrate 7 is longitudinally held by a substrate holder 4 in a growth jig 1. A polycrystal for growth is charged into a soln. reservoir 2, and dissolved to obtain a saturated soln. 8. A piston 3 is thrust in to force up the growth soln. 8, hence the soln. is brought into contact with the substrate 7, and then a lower shutter 6 is closed to separate the soln. 8 supplied in the substrate holder 4 from the soln. 8 on the lower piston 3 side. An upper shutter 5 is further closed to separate the soln. 8 in the substrate holder 4 from the soln. 8 at the upper part. At this time, the interval (a) between the upper or lower end of the substrate 7 and the respective shutters 5 and 6 and the distance (b) between the opposed substrates 7 are limited to conform to a<2b. Cooling is continued under said conditions, an equitaxial layer is grown on the substrate 7, and the layer having uniform thickness is obtained.
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