| 摘要 |
PURPOSE:To accelerate the operational speed while reducing power consumption by a method wherein the second thin film between an emitter region and the first semiconductor film to be a base leading-out electrode is selectively etched to isolate the space between base emitter electrodes by making fine gaps. CONSTITUTION:The second thin film 27 is formed on the overall surface between an oxidation preventive film 25 laminated on a P type Si substrate 20 and the first thin film patterns 26 to be selectively removed by an anisotropic etching process. Next, the first semiconductor film 28 to be a base leading-out electrode is formed on the overall surface to be etched using a resist film 29 as a mask and furthermore the residual film 27 is removed by an etching process. Thus, the film 28 and an emitter region are isolated by making fine gaps in selfaligment mode so that the structure may be miniaturized to increase the breakdown strength in the reverse direction of emitter base while reducing the capacity. Furthermore, the film 28 can be provided with specified thickness not to be subjected to low resistance even if an insulation oxide film 30 is made thicker. Through these procedures, a semiconductor device such as a bipolar type transistor, etc., operating at high speed in low power consumption can be manufactured.
|
