| 摘要 |
PURPOSE:To obtain the wiring of excellent mechanical strength having no electromigration by a method wherein an oxide layer is interposed between metal wiring layers. CONSTITUTION:An SiO2 film 2 and a PSG3 are superposed on an Si substrate 1, and an Al wiring 4, wherein an SiO2 film 5 is pinched in the center part through the intermediary of a connection hole 6, is provided. The title semiconductor device has a very high degree of mechanical strength as it is formed in multilayer structure in which a metal oxide is pinched between metal wiring layers, and as the wiring is divided into two parts, even when a disconnection of wire is generated by the electromigration on one side, the situation can be coped with by the remaining wiring, and the wiring having a high degree of reliability can be obtained.
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