| 摘要 |
PURPOSE:To obtain an ion source having a large speed of thin-film manufacturing, by changing an interval between a plasma electrode and an acceleration electrode compared with that on an atmospheric side by combining a movement inducer with the acceleration electrode. CONSTITUTION:In an initial step in which a boundary plane of a substrate 4 and a thin film is formed, implantation and evaporation of nitrogen ion beams accelerated at 20 KV are concurrently performed to form a 0.2mum thick film on the substrate in an electron beam evaporation device 3. Concurrent evaporations of nitrogen beams and titanium accelerated at 5 KV are then performed to form a 10, mum thick titanium nitride layer. Such acceleration at 20 KV is performed with an interval between an ion plasma electrode 22 and the acceleration electrode 23 being 10 mm, and on the other hand, the acceleration at 5 KV is performed when the electrode 23 approximates the ground electrode 24 by using a rotational movement inducer 30 so that an interval between the electrodes 22 and 23 becomes 2 mm and a drawing-out current density of the ion beams increases. A speed of thin film manufacturing can be enlarged in a state where adhesion force between the substrate and the thin film and substrate temperature are kept constant.
|
