| 摘要 |
PURPOSE:To contrive accomplishment of high density and high integration by a method wherein a resistor is formed on the connection region of a conductive layer, and the occupation area of the resistor itself is reduced. CONSTITUTION:A layer 12 whereon one-conductive type impurities are diffused is formed on a semiconductor substrate 11 as the first wiring layer. Then, an insulator 13 is formed, a prescribed aperture part 14 is formed, and a part of the layer 12 is exposed. Subsequently, an SiN film of several tens-several hundred Angstrom ngstroms, to be turned into a resistor, is formed on the whole surface of the exposed layer 12, and an SiN film pattern 15 is formed. Then, the second wiring layer 16 of 1 mum in thickness, for example, is formed and tee film 15 formed between the layers 12 and 16 is used as a resistor. As above-mentioned, the resistor is formed on the connection region of a conductive layer, and a high density and high integration can be accomplished by reducing the occupation area of the resistor itself.
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