| 摘要 |
PURPOSE:To improve the heat resistance of a ceramic circuit substrate by providing an interconnection layer formed by sequentially providing a bonding layer made of Ti, a barrier layer made of one of Mo and W and Cu, and a main conductor layer which contains Ni on a ceramic substrate. CONSTITUTION:A bonding layer 2 and a barrier layer 3 are formed on a ceramic substrate 1, Ti is used as the layer 2, at least one of w and Mo and Cu are used as the layer 31 and a main conductor layer 4 which contains Ni is formed on the layer 3. The thermal expansion coefficients of the layers 2, 3 are similar, and made of metals which are scarcely thermally diffused. Thus, on distortion between the layers and thermal diffusion between phases are prevented even under severe heat treating conditions, such as brazing at the time of removing the metal to obtain interconnection layer having excellent heat resistance without discoloring, swelling, exfoliating, nor improper adhesion. |
