| 摘要 |
PURPOSE:To establish linear relationship between an amount of incident light and an amount of signal electric charges stored in a second semiconductor region, by fixing a potential of a light detecting section at a constant level by means of a charge movement controlling gate electrode. CONSTITUTION:An amount of signal electric charges stored in an n-type silicon region fixes a potential of a p-n photodiode region at a constant level by means of a charge movement controlling gate electrode 14. The amount of stored signal charges is therefore correctly proportional to an amount of incident light, and a potential of the region in which signal charges are stored varies in accordance with the amount of the stored signal electric charges. Since the potential of a gate electrode 15 of an electric charge storing section is fixed at a constant level by a storage gate voltage (VST), the potential of a floating gate electrode 16 is determined by the potential of the region in which the signal charges are stored. Accordingly, the amount of signal charges stored in an n<->-type silicon region 2 can be determined by detecting the potential of the floating gate electrode 16. |
