| 摘要 |
PURPOSE:To obtain a self-alignment type MESFET of high performance by shortening the gate length with good controllability by side etching after ion implantation with the first insulation film patterned by an isotropic etching method as a mask. CONSTITUTION:The first insulation film 23 relatively thick is deposited on a compound semiconductor substrate 21, which film is selectively etched by anisotropic etching method, and then the source-drain regions 25 are formed by ion implantation. The side surface of the the first insulation film 23 is partly etched by isotropic etching method, with the first mask 24 used for etching left as it is. The second insulation film 26 is deposited and etched over the entire surface by anisotropic etching method, thus being left only on the side wall of the first insulation film. The surface of the first insulation film of the region for gate electrode formation is exposed by selective etching of an organic film 27 formed. Then, the surface of the substrate in the region for said formation is exposed by etching removal. A gate electrode 30 is formed by a lift-off process by removing the organic film. |
