| 摘要 |
PURPOSE:To reduce natural oxide films created in the boundaries between a polycrystalline silicon film and diffused layer to the negligible extent and reduce the contact resistance values between them and obtain stable contacts by a method wherein the diffused layers are formed in contact hole regions in a silicon substrate by hot diffusion through the polycrystalline silicon film. CONSTITUTION:Ion-implantation resistant masks 13 are formed on required regions on a conductivity type semiconductor substrate 11 and ions of 1st impurity whose conductivity type is opposite to the conductivity type of the substrate 11 are selectively implanted into the semiconductor substrate 11 by ion- implantation and the masks 13 are removed to form 1st diffused layers 14. Then insulating films 15 are formed on the required regions and the 1st diffused layers 14 and, after apertures are formed in the insulating films 15 on the required reqions, a polycrystalline silicon film 16 is formed over the insulating films 15 including the apertures B. Then, 2nd impurity whose conductivity type is the same as the 1st impurity is diffused into the polycrystalline silicon film 16 and, further, the 2nd impurity is diffused into the semiconductor substrate 11 to form 2nd diffused layers 17 and the 2nd diffused layers 17 are connected to the 1st diffused layers 14.
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