| 摘要 |
PURPOSE:To eliminate the increase of the resistances of source and drain even when a channel is shortened by burying a metal or semiconductor material in a groove formed in a semiconductor substrate of source and drain regions. CONSTITUTION:In an MOS transistor, grooves are formed in source and drain regions, metal or semiconductor is buried in the grooves to laterally diffuse an impurity in the metal and semiconductor, thereby forming a superposing part of channel with the source and drain. Thus, even when the transistor is shortened in its channel, it is not necessary to form shallow the source and drain to form the source and drain in low resistance.
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