| 摘要 |
PURPOSE:To enable a processing fluid to fully invade even a high-integration semiconductor wafer, with contamination due to colloidal particles being prevented when hydrofluoric acid being as the processing fluid, by forming a steam generation part, a processing part, and a processed steam recovery part, which are respectively specified, and then processing the processed matters by means of the generated steam. CONSTITUTION:A generation part 1 is equipped with a means 2 for storing a processing fluid 3, and a means for compulsorily generating steam 6 by supplying a gas 5 insoluble to the processing fluid 3 into the processing fluid 3 stored by the means 2. A processing part is equipped with a means 10 for holding processed matters 9 inside a flow path of the steam 6 generated. A part 16 to recover the processed steam is disposed on the back stage of the processing part and is equipped with a means for condensing the steam which has passed through the processing part. The processed matters 9 are processed by the said generated steam 6. The means 10 for holding the said processed matters 9 is formed to hold the processed planes of the processed matters 9 so that they become inclined to the flow path of the generated steam 6.
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