| 摘要 |
PURPOSE:To obtain excellent ohmic properties while preventing a disconnection at the stepped section of a second layer wiring and the contamination of a wafer by forming an opening section in the same pattern as a first layer wiring to a second insulating film while a contact hole continuing to the opening section is molded to a tapered shape. CONSTITUTION:An opening section 27 for burying a first layer wiring in the same pattern as the first layer wiring is shaped to an insulating film 25 through etching by using an anisotropic dry etching device, employing a photo-resist pattern 26 as a mask. An insulating film 23 is left and only the insulating film 25 is removed in etching at that time. According to such etching, the insulating film 23 on the opening edge section of a contact hole 24 is etched, and the contact hole 24 is molded to a tapered shape. The photo-resist pattern 26 is removed, and a metallic layer 28 as a first layer wiring material is evaporated onto the whole surface in the opening section 27 and on the insulating film 25 containing the contact hole 24. The upper section of the metallic layer is coated with a photo-resist 29 to flatten the surface.
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