| 摘要 |
PURPOSE:To eliminate the trouble of the formation of an oxide film to various semiconductors, particularly, an In group compound, etc., by using hydrobromic acid as one component. CONSTITUTION:Hydrobromic acid is employed as one component, and used typically in the type of an aqueous solution. lt is preferable that the concentration of such a hydrobromic acid aqueous solution extends over 1-50%. There is possibility in which capacity dissolving an oxide film shaped to a semiconductor as a body to be etched is reduced extremely when said concentration is less than 1%, and concentration is too high and there is the possibility of the corrosion of an etching device, etc., and trouble is often generated in handling, etc., when said concentration exceeds 50%. Other acids, such as hydrochloric acid, sulfuric acid, etc., besides hydrobromic acid and NH4OH for regulating PH, etc., can also be added.
|
