| 摘要 |
PURPOSE:To improve the yield and the quality of a semiconductor device by coating the side of aluminum wirings with a high melting point metal to prevent a cavity from being generated in the wirings. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1, aluminum wirings 3, for example, connected with the substrate 1 through a hole opened in the film 2 are formed, the substrate 1 including the wirings 3 is coated with high melting point titanium, the titanium is anisotropically etched by reactive ion etching, and the side of the wirings 3 is coated with titanium 4. Then, the wirings are coated with an insulating film 6 to be protected. Thus, the wiring end in which a cavity is generated is strengthened in its mechanical strength to have a durability against a stress from an electrically insulating film for surrounding the wirings and functions for absorbing and holding an impurity, thereby eliminating the cavity.
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