| 摘要 |
PURPOSE:To improve the integrity and avoid punch-through between capacitors by a method wherein lower halves of the side walls of pillar shape silicon protrusions are used as capacitors and ring shape gates are formed on the upper parts of the protrusions to form switching transistors. CONSTITUTION:Capacitor electrodes 5 are formed on the side walls of a plurality of island shape protrusions formed on a semiconductor substrate with dielectric layers 4 between so as to make the necessary lengths of the top parts of the side walls remain uncovered. The gate electrodes 6 of switching transistors are formed on the remaining necessary lengths of the top parts of the side walls with gate insulating films 7 between so as to be insulated from the capacitor electrodes 5. A plurality of rows of the gate electrodes 6 are formed by connecting a plurality of the island shape protrusions along the predetermined direction and a plurality of wiring layers 12 which connect the tip parts of a plurality of the island shape protrusions along the predetermined direction are formed so as to be insulated from the gate electrodes 6. For instance, bit lines 12 and word lines 6 cross each other at the respective pillar shape protrusions and the bit lines 12 are connected to the source/drain parts 11 of the transistors through contact windows. |
