| 摘要 |
PURPOSE:To overcome problems due to ionic impurities and to provide a resin- sealed semiconductor device having high reliability, by embedding a metallic electrode to which any voltage can be applied such that the electrode faces to the principal surface of a semiconductor chip secured on an island. CONSTITUTION:A metallic electrode 17 to which any voltage can be applied is embedded at a position over the principal surface of a semiconductor chip 12 disposed within a semiconductor housing 16. In this arrangement, a desired voltage can be applied to the metallic electrode 17 during operation of the semiconductor device so that storage of electric charges in the principal surface of the semiconductor device which would be caused by movement of impurity ions can be limited, and hence creation of inversed regions can be avoided effectively. This means that the inversion preventing effect can be provided by this arrangement and, therefore, leakage of current and deterioration in dielectric strength can be prevented. Thus, the operation of the semiconductor device can be kept stable. Further, corrosion of electrode wiring which would be caused by storage of impurity ions can be also prevented.
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