| 摘要 |
PURPOSE:To prevent Zn contained in a P-type GaAs substrate during a process of crystal growth from being diffused up to an active layer that results in an emitting area and form the active layer having crystallization of high quality by inserting a P-type GaAs layer between the P-type GaAs substrate and an n-type GaAs layer that results in a current block layer. CONSTITUTION:A P-type GaAs layer 2 and an n-type GaAs layer 3 are formed in sequence on a P-type GaAs substrate 1 through a first crystal growth process. Then, a groove which is in a state of stripe reaching up to the P-type GaAs layer 2 is formed through prevailing processes of photoresist and etching which are applicable usually for practical purposes. Subsequently, a P-type Al0.4Ga0.6As layer 4 is formed outside of the groove part through the second crystal growth process so that it covers the whole crystal surface and the following layers which result in active layers are formed in sequence and such layers include: P-type Al0.15Ga0.85As layer 5, n-type Al0.4Ga0.6As layer 6, n-type GaAs layer 7. After that, an n-type ohmic electrode 8, and a P-type ohmic electrode 9 are formed to compose a semiconductor laser.
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