| 摘要 |
PURPOSE:To form an optical vapor growth method by which a continuous film formation process can be facilitated and large through-put can be obtained, by making pressure in a reactant gas system normal and then using laser light formed parallel to substrates and in sheet shape. CONSTITUTION:In an optical vapor growth method by which thin films are formed on substrates 102 by radiating ultraviolet light in a reactant gas system and generating optical reaction, pressure in the reactant gas system is made normal (one barometric pressure), and laser light 105 formed parallel to the substrates 102 and in sheet shape is used as ultraviolet light. The optical vapor growth device is composed to have the following parts; reactant gas introduction ports 201 which are equipped for forming the reactant gas flow 204 vertical to the substrates 102 and orientated to the substrates 102, inert gas introduction ports 202 which are disposed above the reactant gas introduction port 201 and which are equipped for forming the inert gas flow 205 vertical to the substrate 101 and orientated to the substrates 102, a substrate base 103 which is provided with conveyor-type movable function to mount the substrates 102 on. 193 mm light by means of ArF excimer laser oscillation, for example, can be used as the said ultraviolet light.
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