| 摘要 |
PURPOSE:To prevent the generation of an air gap by side etching without inhibiting the object of the formation of a foundation conductive film by forming a protective film having etching mask action to a hydrofluoric acid group chemical onto the sidewall of a contact hole. CONSTITUTION:A pattern for a contact hole is shaped onto a layer insulating film 5, and the contact hole 6 is bored so as to expose a contact-surface forming predetermined section. A natural oxide film 7 grows on the base of the contact hole 6. An SiO2 film 10 is formed on the whole surface on the layer insulating film 5. A CVD oxide film 10' is also deposited on the inner surface of the contact hole. The whole surface of the upper surface of a substrate is etched so as to remove the CVD oxide film 10. The CVD oxide film 10' is left only on the sidewall of the contact hole 6. The whole substrate is dipped in a hydrofluoric acid group chemical solution, and the inner surface of the contact hole is washed to remove the natural oxide film 7. Since the CVD oxide film 10' functions as a protective film against etching by the hydrofluoric acid group chemical solution at that time, a TiSi2 film 4 is not side-etched.
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