| 摘要 |
PURPOSE:To lower the number of components to realize a decrease in cost when a high-frequency FET is used in self-bias, by mounting an element on an end of a transmission substrate and then connecting one of ground electrodes of the element with an upper-surface electrode of a capacitor mounted on a ground conductor of another substrate end, through a conductor layer on the substrate. CONSTITUTION:A semiconductor element 1 is mounted on one end of a transmission substrate 3, and ground electrodes 7 of the semiconductor element 1 are connected to earth with a conductor layer 11 and a capacitor 5 mounted on a ground conductor 2 of another substrate end. For example, a FET element 1 is mounted on the transmission substrate 3, and on the other hand, the transmission substrate 3 and the capacitor 5 are mounted on the ground conductor 2. A gate electrode 8 and drain electrode 9 of the FET element 1 are then connected with the conductor films 4 on the transmission substrate 3 by using wires 10. And one of the source electrodes 7 is connected with an upper-surface electrode 6 of the capacitor 5, through two wires 10. Further the upper-surface electrode 6 of the capacitor 5 is connected with the conductor film 12 on the transmission substrate 3 by using the wire 10. |
