| 摘要 |
<p>PURPOSE:To facilitate manufacturing a TFT with high reliability in which the discontinuity of a drain electrode or a source electrode is eliminated with a high yield by a method wherein the drain electrode is formed after the island part of the TFT which is in contact with the drain electrode or the source electrode is worked to have right-angled shapes or zig-zag shapes. CONSTITUTION:A metal layer is applied to a light transmitting insulating substrate to form a gate electrode 2, and an insulating film 3 and an active layer 4 are successively formed on the gate electrode 2. Then the parts of the gate insulating film 3 and the active layer 4 which are in contact with a drain electrode 5 or a source electrode 6 are worked to have right-angled shapes 10 and 11 or zig-zag shapes 12 and 13 to form the island of a transistor, and then the drain electrode 5 and the source electrode 6 are formed on the island. With this constitution, the length of the step of a part formed by putting the drain electrode 5 or the source electrode 6 on the island is increased and etchant hardly penetrates into the stepped part so that the problem of discontinuity of the drain electrode or the source electrode during the processing can be solved.</p> |
