| 摘要 |
PURPOSE:To obtain a high-quality insulated film with a high dielectric constant holding characteristics such as high density, high resistance, low coating stress as well as electric charge in a low coated film and the like by forming a plasma silicon nitriding film in a process of gate insulated film formation according to glow discharge under specific conditions. CONSTITUTION:In a process of gate insulated film formation, a plasma silicon nitriding film is formed after performing glow discharge by permitting a RF power to have a density of 0.6-0.85 W/cm<2> as a condition of the film formation and a gas mixing ratio of reaction gas NH3 and SiH4(NH3/SiH4) to be set at 15. For instance, the plasma silicon nitriding film having 0.2-0.5mum is deposited on a transparent insulated substrate where a gate electrode is formed according to glow discharge using N2 gas as a carrier gas 20% of SiH4(with an N2 base) and100% of NH3 gas as principal components. In such a case, the film formation is carried out according to the above conditions and moreover, the substrate temperature is set at a temp. of 300 deg.C and a gas pressure is set at 0.8 Torr. |
