| 摘要 |
PURPOSE:To thickly form a flowing insulating film on a gate electrode sidewall by forming a conductive layer to serve as a thicker gate electrode than a predetermined thickness, and then forming the insulating film by a spin coating method. CONSTITUTION:An element separating region 2 and a gate insulating film 3 are formed on the predetermined region of a semiconductor substrate 1, a gate electrode 4 of twice as large as the predetermined thickness of the gate electrode is formed by a CVD method, and an N-type high density impurity diffused region 5 is formed by an ion implanting method. Then, an SOG film 6 is formed by a rotary coating method over the whole exposed surface, the film 6 on the electrode 4 is selectively removed by an anisotropic oxide film dry etching method to expose the top of the gate electrode 4. Then, the electrode 4 is etched back by an anisotropic dry etching method until coming to a predetermined gate electrode film thickness, to remove the film 6 projected upward from the electrode 4 by an anisotropic oxide film dry etching method to the whole surface, a phosphorus glass film 7 is deposited by a CVD method, and heat- treated to be flattened.
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