| 摘要 |
PURPOSE:To prevent wirings from being disconnected and an electric resistance from increasing in a semiconductor device by coating a metal film with polyimide at the time of forming the wirings by allowing the metal film to selectively remain, then coating it with a resist, and photocomposing it. CONSTITUTION:After an insulating film 2 and a metal film 3 are sequentially formed on a silicon substrate 1, the film 3 is coated with a polyimide layer 4, then coated with a resist 5, and photocomposed to form a resist pattern 8. Wirings 9 are formed by dry anisotropic etching. Since the film 4 is formed on the film 3 in case of exposing the resist, the resist is not excessively exposed to the light reflected on the obligue part of the film 3 to form metal wirings of desired width.
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