| 摘要 |
PURPOSE:To prevent breakdown between a collector and an emitter of a bipolar transistor by means of pinchoff of a junction-type FET and to improve dielectric strength of a semiconductor device, by composing a thyristor structure of a semiconductor region of a first conductivity type formed in a semiconductor layer, the semiconductor layer, the base region and the emitter region. CONSTITUTION:A semiconductor device has a semiconductor substrate 1 of a first conductivity type and a sem i conductor layer 2 of a second conductivity type provided on the principal surface of the semiconductor substrate. Utilizing the semiconductor layer 2 as a collector region 21, a base region 3 of the first conductivity type and then an emitter region 4 of the second conductivity type are formed with in the collector region 21 to provide a bipolar transistor. On the other hand, a junction-type FET structure is provided by utilizing the collectorregion 21 as a channel and the base region 3 as a gate. Further, a thyristor structure is constituted by the semiconductor layer, 2, the base region 3, the emitter region 4 and a semiconductor region 35 of the first conductivity type formed in the semi conductor layer 2. In this manner, the semiconductor device is allowed to have a high dielectric strength and a low ON res is tance and to operate stably.
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