| 摘要 |
PURPOSE:To change the temperature of a wafer simply, and to control etching characteristics by a method wherein voltage is applied between electrodes, a substance to be etched is sucked electrostatically to a stage, voltage is fluctuated and the degree of a thermal contact is altered. CONSTITUTION:An electrostatic chuck 10 is formed by burying plate electrodes 10A and 10B into an insulating layer 10C, and positive and negative potential are each applied to the electrodes 10A and 10B through power switches 13, 14 and choke coils 15, 16 from variable DC power supplies 11A, 12A, thus electrostatically sucking a wafer 9 on the electrostatic chuck 10. The temperature of the wafer is determined by the balance of the quantity of heat taken in by plasma and ion bombardment and the quantity of heat escaping to a stage through the electrostatic chuck. Accordingly, the applied voltage of the electrostatic chuck is fluctuated, and the degree of the suction of the wafer, the degree of a thermal contact, is altered, thus easily changing the temperature of the wafer with excellent reproducibility.
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