| 摘要 |
PURPOSE:To make the semiconductor device vequive the less introduction of an impurity to obtain the same resistivity by converting an amorphous silicon grown on the surface of a semiconductor substrate by CVD to an impurity-added polysilicon by heat treatment after the impurity is introduced by ion implantation. CONSTITUTION:Amorphous silicon is grown on the surface of a semiconductor substrate by chemical vapor growth and is converted to impurity-added polysilicon by heat treatment at a temperature of 700 deg.C or higher temperature after an impurity such as boron, phosphorus or arsenic is introduced by ion implantation. For example, the amophous silicon 3 is formed on the semiconductor substrate 1 the surface of which is covered with a silicon oxide film 2 by using a reduced pressure chemical vapor growth equipment with a raw material gas SiH4. Then, arsenic 4 is implanted by ion implantation and after the silicon oxide film is grown on the surface of the amorphous silicon by normal pressure CVD, annealed at a temperature of 950 deg.C. The amorphous silicon 3 is converted to the polysilicon by the heat treatment and most of the arsenic by ion implantation exists in a polysilicon particle 5.
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