| 摘要 |
<p>An integrated sensing device (10) includes a resistance temperature sensor (14) formed in a semiconductor substrate (12) and a resistance heater (22) which is formed on an insulating layer (20) which covers the surface of the semiconductor substrate (12). The resistance heater (22) has a low temperature coefficient of resistivity and is positioned adjacent the resistance temperature sensor (14) so the current flow through the resistance heater (22) will generate heat which is transferred through the insulating layer (20) to the resistance temperature sensor (14). The sensing device (10) is applicable to a variety of sensing systems, such as mass flow measurement systems, dew point detection systems, and frost detection systems.</p> |
