发明名称 MANUFACTURE OF MULTIJUNCTION SEMICONDUCTOR PHOTOELECTRIC CONVERSION ELEMENT
摘要 PURPOSE:To obtain a multijunction semiconductor photoelectric conversion element of high efficiency by a method wherein a connecting portion of an upper cell with a lower cell is formed on the upper cell formed on a dummy substrate, the lower cell is formed on the connecting portion subsequently, and the dummy substrate is removed thereafter. CONSTITUTION:With a dummy substrate 8 used, an upper cell 16 having a high growth temperature is made to grow first, and then a lower cell 23 having a low growth temperature is made to grow. Therefore, neither of the grown cells will be heated at higher temperatures than those during growth. As to a multijunction semiconductor photoelectric conversion element having an upper cell of a smaller lattice constant than a lower cell, as well, lattice mismatch can be surmounted easily, since cells are made to grow in the sequence of the ones of smaller lattice constants ahead. This method enables the formation of an upper cell of high quantity and, consequently, the formation of a multijunction semiconductor photoelectric conversion element of high efficiency.
申请公布号 JPS62291183(A) 申请公布日期 1987.12.17
申请号 JP19860135521 申请日期 1986.06.11
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KATSUMOTO SHINGO;AMANO CHIKARA;SHIBUKAWA ATSUSHI;YAMAMOTO AKIISA
分类号 H01L31/04 主分类号 H01L31/04
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