| 摘要 |
PURPOSE:To enable a growth layer to be formed particularly having steep and excellent layer impurity concentration in thin film lamination growth of a compound semiconductor, by making a reactant gas introduction tube branch via a branching valve and then introducing reactant gases to a chamber from the first branched introduction tube having impurities and from the second branched introduction tube having no impurity. CONSTITUTION:When lamination growth of a thin film is performed on a substrate 3 by introducing reactant gases into a reactor chamber 1, an introduction tube for reactant gases containing constituents for thin film semiconductor formation is made to branch via a branching valve 19. The reactant gases are introduced there from respective introduction tubes 21 and 22, with impurities added to the first branched tube 21 and with no impurity added to the second branched tube. When undoped GaAs is made to grow on the substrate 3, for example, the branching valve 19 is controlled to introduce TMG 17, AsH3 18, and H2 13 in the direction of the tube 20. When n<+>AlGaAs is then made to grow, TMG 17, TMA 16, AsH3 18, and H2 13 are introduced via the branching valve 19 to the tube 21 and to be supplied to the substrate 3 with H2Se 14 added via a valve 8.
|
