| 摘要 |
PURPOSE:To improve the dielectric strength of a collector directly under an external base section, by providing under the external base section a collector barrier region having a conductivity type opposite to that of base and collector regions. CONSTITUTION:In a hot electron transistor consisting of an emitter region 5 of a first conductivity type, an emitter barrier region 4 of an intrinsic conductivity type, a base region 3 of the first conductivity type, a collector barrier region 2 of the intrinsic conductivity type and a collector region 1 of the first conductivity type, said collector barrier region 2 located under a base ohmic electrode 8 provided on the base region 3, namely on an external base region 3a has a conductivity type opposite to the first conductivity type. Even if an alloy layer is formed to have a depth larger than the base width during formation of the base ohmic electrode 8, any leak current directly under the base ohmic electrode 8 can be neglected because a barrier having a built-in potential is provided in the collector barrier region. Accordingly, the dielectric strength between the base and the collector can be improved. |
