TEST CIRCUIT FOR HIGH-SPEED MOS ELEMENT,申请号JP19870114912-传众专利搜索

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发明名称	TEST CIRCUIT FOR HIGH-SPEED MOS ELEMENT
摘要
申请公布号	JPS62289778(A)	申请公布日期	1987.12.16
申请号	JP19870114912	申请日期	1987.05.13
申请人	GENRAD INC	发明人	JIERARUDO SHII KOTSUKUSU
分类号	G01R31/28	主分类号	G01R31/28
代理机构		代理人
主权项
地址

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