| 发明名称 |
A THIN FILM FIELD-EFFECT TRANSISTOR AND A PROCESS FOR PRODUCING THE SAME |
| 摘要 |
<p>A thin film transistor including a glass substrate and a gate electrode which is formed on the glass substrate. Source and drain electrodes are also provided. An insulating film covers at least the gate electrode and an amorphous semiconductor layer is formed on the insulating film. The semicondcutor layer includes a first portion having the source electrode formed thereon, a second portion having the drain electrode formed thereon, and a third portion formed between the first and second portions and located above the gate electrode, having a thin thickness which allows photolithographic light to permeate therethrough.</p> |
| 申请公布号 |
EP0090661(B1) |
申请公布日期 |
1987.12.16 |
| 申请号 |
EP19830301819 |
申请日期 |
1983.03.30 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KODAMA, TOSHIROU;KAWAI, SATORU;NASU, YASUHIRO;TAKAGI, NOBUYOSHI;YANAGISAWA, SHINTARO |
| 分类号 |
H01L21/027;H01L21/336;H01L27/12;H01L29/40;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L21/312 |
主分类号 |
H01L21/027 |
| 代理机构 |
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