发明名称 DEVICE FOR FORMING THIN FILM OF SINGLE CRYSTAL
摘要 PURPOSE:To prevent floating of jetted gas molecules and to contrive to eliminate unevenness of temperature distribution on the surface of a substrate, by setting an opening of an exhaust vent of a vacuum container in a gas jetting direction and keeping the substrate in a line connecting the opening of the exhaust vent to a gas jetting device. CONSTITUTION:A vacuum device 1 and an opening of an exhaust vent 4 thereof are integrated, made into a truncated cone and a substrate 2 is attached to the inside of a substrate holding member 7 of truncated hexagonal pyramid while laying the surface to be treated outside. A gas jetting device 3 is made in such a way that the jetting direction of the gas sprayed from the device is superimposed on the central axis of the opening of the exhaust vent 4. Most of the jetted gas is directly exhausted, a gas going toward the substrate 2 is reflected on the surface of the substrate 2 and on the surface of the substrate holding member 7, further reflected on the side wall of the container 1, made into 5b, sucked to the exhaust vent 4 and exhausted without floating. Consequently, partial pressure of the jetted gas reaches a steady value and a crystalline multi-layer thin film free from deviation of composition ratio can be formed.
申请公布号 JPS62288192(A) 申请公布日期 1987.12.15
申请号 JP19860129452 申请日期 1986.06.04
申请人 ANELVA CORP 发明人 MURAKAMI SHUNICHI;SAKAI SUMIO;ISHIDA TETSUO;NADAGUCHI AKIRA
分类号 H01L21/205;C30B23/08;C30B25/14 主分类号 H01L21/205
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